Core Infrastructure

Compound Semiconductor GaN fab facility

A state-of-the-art compound semiconductor GaN fab is being established to manufacture and process 6-inch GaN epi wafers, enabling high-yield production of red, green, blue, and white Mini/Micro-LEDs. The facility integrates advanced epitaxy and downstream processes to deliver high-efficiency, high-brightness solutions for next-generation display and lighting applications.

  • GaN fab to manufacture 6” epi wafers for Red, Green & Blue Mini/Micro-LEDs
  • GaN foundry setup with technical collaboration with Lumens & Soft-Epi
  • Monolithic R G B Pixel manufacturing (Soft-Epi's core technology)
  • GaN and AlGaInP Mini/Micro-LEDs 6” wafers
Monolithic RGB wafer

Technology

Step 1

Substrate Preparation

Selection and cleaning of sapphire substrates to ensure low defect density and good lattice compatibility.

Step 2

GaN epitaxial Growth (MOCVD)

Deposition of GaN layers using MOCVD techniques, forming buffer layers, n-GaN, p-GaN, and multiple quantum wells (MQWs).

Step 3

Wafer Inspection & Characterization

Measurement of thickness, uniformity, wavelength, and defect density.

Step 4

Photolithography

Patterning of microLED pixels using high-resolution lithography.

Step 5

Etching

Dry etching to define individual microLED mesas and expose n-GaN layers.

Step 6

Wafer Thinning / Substrate Processing

Laser lift-off (for sapphire) or thinning for improved light extraction and integration.

Step 7

MicroLED Chip Singulation / Mass Transfer Prep

Dicing or preparation for mass transfer processes to place microLEDs onto backplanes.

Step 8

Testing & Binning

Electrical and optical testing for brightness, wavelength uniformity, and defect sorting.

Step 9

Integration

Mass transfer of RGB microLEDs onto CMOS/TFT backplanes for display modules.

Flip-chip Mini/Micro-LED Specifications

Absolute maximum ratings and electrical / optical characteristics for Red, Green, and Blue flip-chip LEDs, organized in a clean summary layout for product and technology presentations.

  • Flip-chip LED specifications for Red, Green, and Blue emitters
  • Measured at Ta = 25 °C and If = 5 mA
  • Includes absolute maximum ratings and electrical / optical characteristics
Test Condition

If = 5 mA

Electrical and optical values are shown at the same current condition for easier comparison.

Ambient Temperature

Ta = 25 °C

All maximum ratings and typical values are referenced after packaging at room temperature.

Package Notes

Pulse forward current and viewing angle remain manufacturer inputs and are visually flagged.

Red Flip-chip LED

620–625 nm · 622.5 nm typ.

Absolute Maximum Ratings
DC Forward Current
Operating Temperature
Storage Temperature
Junction Temperature

Green Flip-chip LED

520–535 nm · 527.5 nm typ.

Absolute Maximum Ratings
DC Forward Current
Operating Temperature
Storage Temperature
Junction Temperature

Blue Flip-chip LED

465–475 nm · 470 nm typ.

Absolute Maximum Ratings
DC Forward Current
Operating Temperature
Storage Temperature
Junction Temperature

Red Color Flip-chip LED

620–625 nm · 622.5 nm typ.

Electrical & Optical Characteristics
ParameterConditionMin.Typ.Max.Unit
DC Forward Voltage@ 5 mA1.82.02.2V
Reverse Current@ −25 V00.1μA
Reverse Voltage@ −10 μA3060V
Dominant Wavelength@ 5 mA620622.5625nm
Luminous Intensity@ 5 mA175280370mcd
ESDHBM1kV
Notes: Green and Blue luminous intensity values are based on the supplied optical power.

Green Color Flip-chip LED

520–535 nm · 527.5 nm typ.

Electrical & Optical Characteristics
ParameterConditionMin.Typ.Max.Unit
DC Forward Voltage@ 5 mA2.22.452.7V
Reverse Current@ −12 V00.1μA
Reverse Voltage@ −10 μA15V
Dominant Wavelength@ 5 mA520527.5535nm
Optical Power@ 5 mA246mW
Luminous Intensity@ 5 mA34.6669104mcd
ESDHBM2kV
Notes: Green and Blue luminous intensity values are based on the supplied optical power.

Blue Color Flip-chip LED

465–475 nm · 470 nm typ.

Electrical & Optical Characteristics
ParameterConditionMin.Typ.Max.Unit
DC Forward Voltage@ 5 mA2.62.853.1V
Reverse Current@ −12 V00.1μA
Reverse Voltage@ −10 μA15V
Dominant Wavelength@ 5 mA465470475nm
Optical Power@ 5 mA5811mW
Luminous Intensity@ 5 mA86.66139190mcd
ESDHBM2kV
Notes: Green and Blue luminous intensity values are based on the supplied optical power.

Applications

Next-Generation Displays

Ultra-high brightness, contrast, and energy-efficient displays for TVs, digital cinemas, home theatres, monitors, smartphones, smartwatches, and tablets.

AR & VR Microdisplays

Microdisplays for AR/VR headsets requiring very high pixel density, low power consumption, and excellent color performance.

Automotive Displays & Lighting

Advanced dashboards, heads-up displays (HUDs), and adaptive lighting systems with high brightness and reliability in harsh conditions.

Large-Scale Digital Signage

Outdoor and indoor video walls, advertising billboards, and stadium displays with high luminance and durability.

Wearables & IoT Devices

Compact, low-power displays for fitness bands, smart glasses, and other connected devices.

Optical Communication (Li-Fi)

High-speed data transmission using visible light, leveraging fast switching capabilities of MicroLEDs.

Biomedical & Sensing

MicroLED arrays for medical imaging, biosensing, optogenetics, and lab-on-chip systems.

Industrial & Defense

Rugged displays and optical systems for avionics, simulation, night vision augmentation, and mission-critical environments.

Micro-Projection & Specialty Lighting

High-resolution micro-projectors and tunable lighting using individually addressable RGB emitters.

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